Method for forming semiconductor device

A method of forming a non-volatile memory device, the method comprising:

• forming a string select line, a ground select line, and a plurality of word lines between the string select line and the ground select line on a substrate having a plurality of active regions, the string and ground select lines and the plurality of word lines crossing over the active regions;
• forming an insulation layer covering the ground select line, the string select line, and the plurality of word lines;
• patterning the insulation layer to form a plurality of first contact holes;
• forming a plurality of first contacts within respective first contact holes and forming a plurality of first bit lines electrically connected to respective first contacts;
• forming a plurality of spacers on sidewalls of the first bit lines;
• forming a second contact hole between adjacent ones of the plurality of first contact holes by removing the insulation layer between the adjacent ones of the plurality of spacers;
• and
• forming a second contact within the second contact holes and a second bit line electrically connected to the second contact.

A method of forming a semiconductor device, the method comprising:

• forming a first insulation layer on a substrate;
• forming a first mask on the first insulation layer, the first mask defining an opening;
• forming a first groove within the first insulation layer using the first mask;
• forming a second insulation layer on the first mask and on a side of the first groove to define a second groove, the second groove having a smaller width than the first groove;
• forming a second mask at least partially filling the second groove;
• forming a plurality of third grooves for bit lines by removing portions of the second insulation layer, each third groove being between the first and second masks;
• forming a third mask having an opening exposing the plurality of third grooves;
• forming a plurality of contact holes disposed between the adjacent first and second masks and self-aligned with the third grooves by patterning the first insulating layer using the third, second and first masks as an etching mask;
• forming a conductive material on the first and second masks to fill the third grooves and respective contact holes;
• and
• forming a plurality of conductive lines and a plurality of contacts by performing an etching process on the conductive material, the contacts being self-aligned with respective conductive lines.

A method of forming a semiconductor device, the method comprising:

• forming a first insulation layer on a substrate;
• forming a first mask on the first insulation layer, the first mask defining a first groove therein;
• forming a second mask dividing the first groove, the second mask disposed within the first groove and defining a plurality of third grooves between the first and second masks;
• forming a third mask, the third mask having an opening crossing over at least one of the plurality of third grooves;
• forming a plurality of contact holes self-aligned with respective third grooves by patterning the first insulation layer using the third mask, the second mask, and the first mask as an etching mask;
• and
• forming a plurality of conductive lines and a plurality of contacts self-aligned with respect to corresponding conductive lines by filling the contact holes and the third grooves with a conductive material and etching the conductive material.