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US 7,842,563 B2Granted
Thin film transistor, method of fabricating the same, and flat panel display using thin film transistor
AssigneeSamsung Mobile Display Co., Ltd.
InventorsJae-Bon Koo, Sang-Gul Lee
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Abstract
A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.
Claims11
A method of fabricating a thin film transistor, comprising:
- forming an active layer on an insulating substrate;
- forming a gate insulating film on the active layer;
- forming a conductive film pattern on the gate insulating film;
- doping on the active layer lightly;
- after doping on the active layer lightly, oxidizing the conductive film pattern to form a conductive oxide film pattern covering an upper surface of the conductive film pattern;
- doping the active layer highly using the conductive oxide film pattern as a mask,
- wherein source/drain regions of the active layer have an LDD region, and the LDD region at least partially overlaps with a gate electrode.
4 more elements
Dependencies are inferred from the claim text.