Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates
AssigneeInternational Business Machines Corporation
InventorGuy Moshe Cohen
Life of this patent
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Abstract
A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The strained-silicon channel is non-planar.
Claims12
A method of forming a semiconductor device, comprising:
- forming a strained-silicon channel adjacent a source and a drain, the strained-silicon channel comprising two separated portions, wherein said two separated portions of the strained-silicon channel connect the source and the drain;
- forming a first gate over a first side of said strained-silicon channel;
- forming a second gate over a second side of said strained-silicon channel;
- forming a first gate dielectric between said first gate and said strained-silicon channel;
- and
- forming a second gate dielectric between said second gate and said strained-silicon channel,
- wherein said strained-silicon channel is non-planar, and
- wherein the first gate is separated from the second gate.
A method of forming a semiconductor device, comprising:
- forming a strained-silicon channel adjacent a source and a drain, the strained-silicon channel comprising two separated portions wherein said two separated portions of the strained-silicon channel connect the source and the drain;
- forming a first gate over a first side of said strained-silicon channel;
- forming a second gate over a second side of said strained-silicon channel;
- forming a first ate dielectric between said first ate and said strained-silicon channel;
- and
- forming a second gate dielectric between said second gate and said strained-silicon channel,
- wherein said strained-silicon channel is non-planar, and
- wherein the first gate comprises at least one chemical element not included in the second gate.
A method of forming a semiconductor device, comprising:
- forming a strained-silicon channel adjacent a source and a drain, the strained-silicon channel comprising two separated portions, wherein said two separated portions of the strained-silicon channel connect the source and the drain;
- forming a first gate over a first side of said strained-silicon channel;
- forming a second gate over a second side of said strained-silicon channel;
- forming a first gate dielectric between said first gate and said strained-silicon channel;
- and
- forming a second gate dielectric between said second gate and said strained-silicon channel,
- wherein said strained-silicon channel is non-planar, and
- wherein the first gate dielectric is chemically different than the second gate dielectric.
Dependencies are inferred from the claim text.