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US 7,842,560 B2Granted
Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same
AssigneeLG Display Co., Ltd.
InventorsBo Hyun Lee, Tae Hyoung Moon
Life of this patent
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Abstract
A method of manufacturing a thin film transistor includes: forming a gate insulating layer on a substrate having a gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; and applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial.
Claims3
A method of manufacturing a thin film transistor, the method comprising:
- forming a gate insulating layer on a substrate having a gate electrode;
- forming a semiconductor layer of nanomaterial on the gate insulating layer;
- forming a source electrode and a drain electrode on the gate insulating layer;
- and
- applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial,
- wherein the nanomaterial includes a nanowire,
- wherein a major axis of the nanowire is arranged according to a direction of an electric field between the source electrode and the drain electrode,
- wherein the step of forming the semiconductor layer of nanomaterial on the gate insulating layer includes:
- forming a self-assembled monolayer having a first polarity charge on the gate insulating layer;
- and
- dropping the nanomaterial on the substrate having the self-assembled monolayer, the nanomaterial having a second polarity charge,
- wherein the first polarity charge is positive and the second polarity charge is negative,
- wherein the self-assembled monolayer includes an —NH2 group,
- wherein the step of forming the self-assembled monolayer having the first polarity charge on the gate insulating layer includes:
- projecting a deep-ultraviolet on a mask to leave the self-assembled monolayer on a region where the semiconductor layer is formed.
12 more elements
A method of manufacturing a liquid crystal display device, the method comprising:
- forming a gate electrode and a gate line on a substrate;
- forming a gate insulating layer on the substrate having the gate electrode;
- forming a semiconductor layer of nanomaterial on the gate insulating layer;
- forming a source electrode and a drain electrode on the gate insulating layer;
- applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial;
- forming a passivation layer on the substrate having the source electrode and the drain electrode, the passivation layer having a contact hole exposing the drain electrode;
- and
- forming a pixel electrode on the passivation layer, the pixel electrode connecting to the drain electrode,
- wherein the nanomaterial includes a nanowire,
- wherein a major axis of the nanowire is arranged according to a direction of an electric field between the source electrode and the drain electrode,
- wherein the step of forming the semiconductor layer of nanomaterial on the gate insulating layer includes:
- forming a self-assembled monolayer having a first polarity charge on the gate insulating layer;
- and
- dropping the nanomaterial on the substrate having the self-assembled monolayer, the nanomaterial having a second polarity charge,
- wherein the first polarity charge is positive and the second polarity charge is negative,
- wherein the self-assembled monolayer includes an —NH2 group,
- wherein the step of forming the self-assembled monolayer having the first polarity charge on the gate insulating layer includes:
- projecting a deep-ultraviolet on a mask to leave the self-assembled monolayer on a region where the semiconductor layer is formed.
15 more elements
Dependencies are inferred from the claim text.