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US 7,842,555 B2Granted
Integrated transistor module and method of fabricating same
AssigneeFairchild Semiconductor Corporation
InventorsRajeev D. Joshi, Jonathan A. Noquil, Consuelo N. Tangpuz
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Abstract
An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.
Claims7
A method of fabricating an integrated transistor module, comprising:
- forming a continuous metal leadframe that defines at least one low-side land on a first plane and at least one high-side land on a second plane substantially parallel to and distinct from said first plane vertically offset from said low-side land, and a stepped portion mechanically and electrically interconnecting said low-side and high-side lands;
- enclosing in an electrically insulating material a portion of said leadframe proximate said high-side land, an upper surface of said insulating material on a side of said leadframe that is opposite said high-side land being substantially coplanar relative to a side of said leadframe opposite said low-side land;
- and
- mounting a high-side transistor upon said high-side land, a source of said high-side transistor being electrically connected to said high-side land.
1 more element
Dependencies are inferred from the claim text.