US 7,842,554 B2Granted

VLSI hot-spot minimization using nanotubes

AssigneeInternational Business Machines Corporation

InventorsChristos Dimitrios Dimitrakopoulos, Christos John Georgiou

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Abstract

The invention relates to a semiconductive device comprising a die with at least one defined hot-spot area lying in a plane on the die and a cooling structure comprising nanotubes such as carbon nanotubes extending in a plane different than the plane of the hot-spot area and outwardly from the plane of the hot-spot area. The nanotubes are operatively associated with the hot-spot area to decrease any temperature gradient between the hot-spot area and at least one other area on the die defined by a temperature lower than the hot-spot area. A matrix material comprising a second heat conducting material substantially surrounds the nanotubes and is operatively associated with and in heat conducting relation with the other area on the die defined by a temperature lower than the hot-spot area. The heat conductivity of the nanotubes is greater than the heat conductivity of the matrix material, with the distal ends of the nanotubes exposed to present a distal surface comprising the first heat conducting means for direct contact with a medium comprising a cooling fluid. The inventors also disclose processes for manufacturing and using the device and products produced by the processes.

Claims8

Dependent claims

A process for providing cooling means on the surface of a semiconducting device having a die comprising:

(a) defining by thermal analysis, at least one hot-spot area lying in a plane on said die;
(b) defining by thermal analysis, at least one other area on said die having a temperature lower than said hot-spot area;
(c) fabricating a mask corresponding to said hot-spot area;
(d) selectively applying to the surface of said die by means of said mask, a catalyst to define a catalyst area corresponding to said hot-spot area and thereby produce a semiconductive device having a die with a selectively catalyzed surface;
said catalyst selected to promote the growth of a plurality of heat conducting nanotube means;
(e) growing said nanotube means from a first heat conducting material and on said selectively catalyzed area to extend in a different plane than the plane of said hot-spot area and outwardly form the plane of said hot-spot area, said nanotube means being operatively associated with said hot-spot area to decrease any temperature gradient between said hot-spot area and said area on said device having a temperature lower than said hot-spot area;
(f) depositing a second heat conducting material on the surface of said die to form a matrix to surround said nanotube means, said second heat conducting material extending to and operatively associated with said other area on said die having a temperature lower than said hot-spot area to conduct heat away from said other area, said nanotube means made from said first heat conducting material having a higher heat conductivity than said matrix made from second heat conducting material;
(g) sufficiently removing any of said second heat conducting material that extends above the distal ends of said nanotube means to make said distal ends available for direct contact with a medium comprising a heat exchange medium.

5 more elements

A process for cooling the surface of a semiconducting device having a die comprising:

(a) defining by thermal analysis, at least one hot-spot area lying in a plane on said die;
(b) defining by thermal analysis, at least one other area on said die having a temperature lower than said hot-spot area;
(c) fabricating a mask corresponding to said hot-spot area;
(d) selectively applying to the surface of said die by means of said mask, a catalyst to define a catalyst area corresponding to said hot-spot and thereby produce a semiconductive device having a die with a selectively catalyzed surface;
said catalyst selected to promote the growth of a plurality of heat conducting nanotube means;
(e) growing said nanotube means from a first heat conducting material and on said selectively catalyzed area to extend in a different plane than the plane of said hot-spot area and outwardly form the plane of said hot-spot area, said nanotube means being operatively associated with said hot-spot area to decrease any temperature gradient between said hot-spot area and said area on said device having a temperature lower than said hot-spot area;
(f) depositing a second heat conducting material on the surface of said die to form a matrix to substantially surround said nanotube means, said second heat conducting material extending to and operatively associated with said other area on said die having a temperature lower than said hot-spot area to conduct heat away from said other area, said nanotube means made of said first heat conducting material having a higher heat conductivity than said matrix formed from said second heat conducting material;
(g) sufficiently removing any of said second heat conducting material that extends above the distal ends of said nanotube means to make said distal ends available for direct contact with a medium comprising a heat exchange medium;
(h) contacting said distal ends with said medium comprising a heat exchange medium, said heat exchange medium being at a temperature lower than the temperature of said distal ends.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/169,458Filed 8 Jul 2008 · continuation
Priority: 29 Mar 2006
Published: US 2008/0316711 A125 Dec 2008
Granted: 30 Nov 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

F28F 21/02
Constructions of heat-exchange apparatus characterised by the selection of particular materials: of carbon, e.g. graphite
H10W 40/25
Arrangements for cooling: characterised by their materials
F28D 2015/0225
In which the medium condenses and evaporates, e.g. heat pipes: microheat pipes
F28D 2021/0029
For cooling heat generating elements, e.g. for cooling electronic components or electric devices: heat sinks