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US 7,842,537 B2Granted
Stressed semiconductor using carbon and method for producing the same
AssigneeIntel Corporation
InventorsKramadhati V. Ravi, Brian S. Doyle
Life of this patent
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Abstract
A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer induces stress in the semiconductor layer, thereby increasing carrier mobility in the device channel region. The carbon layer may be selectively formed or patterned to localize the induced stress.
Claims18
A method, comprising:
- forming a carbon layer on a substrate;
- forming a semiconductor layer above the carbon layer, the carbon layer to stress the semiconductor layer, wherein the carbon layer is discontinuous;
- forming a device in said semiconductor layer above said carbon layer.
A method, comprising:
- forming a stressed diamond layer above a substrate;
- depositing a buffer layer over to the stressed diamond layer;
- forming a silicon layer above the buffer layer such that the silicon layer is stressed;
- forming a transistor in the silicon layer;
- and
- wherein the buffer layer comprises a polysilicon layer and a silicon dioxide layer.
3 more elements
A method, comprising:
- forming a discontinuous tensilely stressed carbon layer over a substrate;
- forming a discontinuous compressively stressed carbon layer over the substrate;
- forming an polycrystalline layer over both the tensilely stressed and compressively stressed carbon layers;
- and
- forming a semiconductor layer over the polycrystalline layer such that the semiconductor layer above the tensilely stressed carbon layer is compressively stressed and the semiconductor layer above the compressively stressed carbon layer is tensilely stressed.
2 more elements
A method comprising:
- forming a transistor having a channel region in a semiconductor layer;
- and
- forming a stressed carbon layer over the channel region of the transistor, the carbon layer to produce stress in the channel region;
- and
- wherein forming the stressed carbon layer comprises forming the stressed carbon layer with carbon particles having a grain size to produce tensile stress in the silicon layer.
2 more elements
An apparatus comprising:
- a stressed carbon layer formed over a substrate;
- a semiconductor layer formed over the carbon layer, the carbon layer to stress the semiconductor layer, wherein the stressed carbon layer is discontinuous;
- and
- a device formed in said semiconductor layer above said stressed carbon layer.
1 more element
An apparatus comprising:
- a transistor having a channel region formed in a semiconductor layer;
- and
- a first stressed carbon layer formed over the channel region of the transistor, the first stressed carbon layer producing a stress in the channel region;
- and
- wherein the first carbon layer is under tensile stress.
2 more elements
Dependencies are inferred from the claim text.