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US 7,842,536 B2Granted
Vacuum jacket for phase change memory element
AssigneeMacronix International Co., Ltd.
InventorHsiang-Lan Lung
Life of this patent
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Abstract
A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase change element; a bit line electrode in contact with the upper electrode element; and a dielectric fill layer surrounding the phase change element and the upper electrode element, spaced from the same and sealed by the bit line electrode to define a vacuum jacket around the phase change element and upper electrode element.
Claims7
A method of fabricating a memory device, comprising:
- forming a first electrode;
- forming a memory element electrically coupled to the first electrode;
- forming a second electrode electrically coupled to the memory element, the second electrode and the memory element arranged in electrical series;
- and
- forming a dielectric fill layer spaced from the memory element and the second electrode to define a vacuum jacket surrounding the memory element and at least a portion of the second electrode, wherein the memory element is exposed all around to the vacuum jacket.
2 more elements
Dependencies are inferred from the claim text.