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US 7,842,533 B2Granted
Electromagnetic radiation sensor and method of manufacture
AssigneeRobert Bosch GmbH
InventorMatthieu Liger
Life of this patent
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Abstract
A method of forming a semiconductor sensor in one embodiment includes providing a substrate, forming a reflective layer on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, and removing the sacrificial layer.
Claims22
A method of forming a semiconductor sensor comprising:
- providing a substrate;
- forming a reflective layer on the substrate;
- forming a sacrificial layer on the reflective layer;
- forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer;
- forming an absorber in the absorber layer integrally with at least one suspension leg;
- and
- removing the sacrificial layer.
4 more elements
A complementary metal oxide semiconductor (CMOS) sensor device comprising:
- a complementary metal oxide semiconductor (CMOS) substrate;
- at least one reflective component formed on the substrate;
- and
- at least one absorber spaced apart from the at least one reflective component, the at least one absorber formed by atomic layer deposition.
1 more element
A complementary metal oxide semiconductor (CMOS) sensor device comprising:
- a complementary metal oxide semiconductor (CMOS) substrate;
- at least one reflective component formed on the substrate;
- and
- at least one absorber spaced apart from the at least one reflective component, the at least one absorber including a maximum thickness of less than 50 nm and exhibiting a good noise-equivalent temperature difference (NETD).
1 more element
Dependencies are inferred from the claim text.