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US 7,842,532 B2Granted
Nitride semiconductor device and method for manufacturing the same
AssigneePanasonic Corporation
InventorsToshiyuki Takizawa, Jun Shimizu, Tetsuzo Ueda
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Abstract
A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.
Claims12
A method for manufacturing a nitride semiconductor device comprising the steps of:
- forming a first nitride semiconductor layer on a principal surface of a substrate;
- forming one or more convex portions in at least a top portion of the first nitride semiconductor layer;
- and
- selectively growing a second nitride semiconductor layer on the side surfaces of the one or more convex portions of the first nitride semiconductor layer in a direction substantially parallel to the principal surface of the substrate, after the step of forming the one or more convex portions, wherein in the step of selectively growing the second nitride semiconductor layer, the second nitride semiconductor layer is grown mainly on side surfaces of the one or more convex portions of the first nitride semiconductor layer, and is hardly grown on a surface substantially parallel to the principal surface of the substrate.
1 more element
Dependencies are inferred from the claim text.