Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
AssigneesThe Regents of the University of California, Japan Science and Technology Agency
InventorsMathew C. Schmidt, Kwang-Choong Kim, Hitoshi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura
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Abstract
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
Claims28
A method for fabricating a non-polar III-nitride Light Emitting Diode (LED), comprising:
- (a) growing an n-type III-nitride layer on a non-polar III-nitride substrate or template;
- (b) growing an active region including a quantum well structure on the n-type III-nitride layer, wherein a non-polar quantum well in the quantum well structure is grown at a quantum well growth temperature;
- and
- (c) growing a non-polar p-type III-nitride layer on the active region at a temperature less than 150° C. more than the quantum well growth temperature.
A non-polar III-nitride Light Emitting Diode (LED) device, comprising:
- (a) an n-type III-nitride layer grown on a non-polar III-nitride substrate or template;
- (b) an active region including a non-polar quantum well structure grown on the n-type III-nitride layer;
- (c) a non-polar p-type III-nitride layer grown on the active region;
- and
- (d) the LED having an external quantum efficiency (EQE) of at least 35%, and an output power of at least 25 mW at a drive current of 20 mA.
Dependencies are inferred from the claim text.