Buried conductor for imagers
AssigneeMicron Technology, Inc.
InventorHoward E. Rhodes
Life of this patent
Estimating the term…
Abstract
A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.
Claims22
A method of forming a pixel cell, the method comprising the acts of:
- forming a photo-conversion device at a surface of a substrate;
- forming at least one contact area;
- forming at least a first insulating layer over the photo-conversion device and the at least one contact area;
- forming at least one opening in the first insulating layer;
- forming a polysilicon comprising material within the at least one opening and in contact with the at least one contact area;
- and
- forming a conductive material layer over and in contact with the polysilicon comprising material, the act of forming the conductive material layer comprising forming at least one of a silicide layer and a refractory metal layer.
A method of forming a pixel cell, the method comprising the acts of:
- forming a photo-conversion device at a surface of a substrate;
- forming a first transistor coupled to the photo-conversion device, the first transistor having a gate electrode and a gate insulator over the gate electrode;
- forming at least one insulating layer over the photo-conversion device and the first transistor;
- forming a first opening in the at least one insulating layer and the gate insulator, the first opening extending to the gate electrode;
- providing a polysilicon comprising layer in the first opening and in contact with the gate electrode.
Dependencies are inferred from the claim text.