US 7,842,452 B2 · Pattern forming method

Abstract

A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.

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Claims27

Dependent claims

A pattern forming method which uses a positive resist composition comprising:

(A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid;
(B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
(C) a silicon-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and
(D) a solvent,
wherein the silicon-containing resin (C) is added in an amount of 0.047 to 6.60 mass % based on the total solids in the positive resist composition, and
wherein the alkali-soluble group (X) has a phenolic hydroxyl group, a carboxylic group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, an (alkylsulfonyl)(alkylcarbonyl)methylene group, an (alkylsulfonyl)(alkylcarbonyl)imide group, a bis(alkylcarbonyl)methylene group, a bis(alkylcarbonyl)imide group, a bis(alkylsulfonyl)methylene group, a bis(alkylsulfonyl)imide group, a tris(alkylcarbonyl)methylene group or a tris(alkylsulfonyl)methylene group,
the method comprising:
(i) a step of applying the positive resist composition to a substrate to form a resist coating,
(ii) a step of exposing the resist coating to light via an immersion liquid,
(iii) a step of removing the immersion liquid remaining on the resist coating,
(iv) a step of heating the resist coating, and
(v) a step of developing the resist coating.

9 more elements

A pattern forming method which uses a positive resist composition comprising:

(A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid;
(B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
(C) a silicon-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and
(D) a solvent,
wherein the silicon-containing resin (C) is added in an amount of 0.047 to 6.60 mass % based on the total solids in the positive resist composition, and
wherein the group (XI) capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer includes a lactone group, an ester group, a sulfonamide group, an acid anhydride group or an acid imide group,
the method comprising:
(i) a step of applying the positive resist composition to a substrate to form a resist coating,
(ii) a step of exposing the resist coating to light via an immersion liquid,
(iii) a step of removing the immersion liquid remaining on the resist coating,
(iv) a step of heating the resist coating, and
(v) a step of developing the resist coating.

9 more elements

A pattern forming method which uses a positive resist composition comprising:

(A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid;
(B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
(C) a silicon-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and
(D) a solvent,
wherein the silicon-containing resin (C) is added in an amount of 0.047 to 6.60 mass % based on the total solids in the positive resist composition, and
wherein the silicon-containing resin (C) contains either a repeating unit represented by the following formula (C1), or a repeating unit represented by following formula (C2):
wherein in the formulae (C1 and (C2), X11 represents an oxygen atom or —N(R13)—;
R13 represents a hydrogen atom, an alkyl group which may be linear or branched and may have a substituent, or a cycloalkyl group;
R11 represents a hydrogen atom, a halogen atom, an alkyl group which may be linear or branched and may have a substituent or a cycloalkyl group;
R12 and R21 each represent an organic group having at least one silicon atom,
the method comprising:
(i) a step of applying the positive resist composition to a substrate to form a resist coating,
(ii) a step of exposing the resist coating to light via an immersion liquid,
(iii) a step of removing the immersion liquid remaining on the resist coating,
(iv) a step of heating the resist coating, and
(v) a step of developing the resist coating.

13 more elements

Dependencies are inferred from the claim text.

Description18,892 words

Summary1,531 words

#1. Field of the Invention

#The present invention relates to a pattern forming method that utilizes a positive resist composition usable in a lithography process for manufacturing semiconductors, such as ICs, and circuit boards for liquid crystal displays and thermal heads, and other photofabrication processes. More specifically, the invention is concerned with a pattern forming method that utilizes a specified positive resist composition suitable for exposure performed with a projection exposure apparatus for immersion lithography using as a light source far ultraviolet light with wavelengths of 300 nm or below.

#2. Description of the Related Art

Detailed description17,361 words

#The invention is described below in detail.

#Additionally, the term “group (atomic group)” used in this specification is intended to include both unsubstituted and substituted ones when neither word substituted nor unsubstituted is added thereto. For instance, the term “alkyl group” is intended to include not only an alkyl group having no substituent (an unsubstituted alkyl group) but also an alkyl group having a substituent or substituents (a substituted alkyl group).

#[1] Silicon-Free Resin (A) that can Increase Solubility in Alkaline Developer Under Action of Acid

Facts

Application

12/331,136Filed 9 Dec 2008 · continuation

Priority

JP 2006-01397923 Jan 2006

Published

US 2009/0123880 A114 May 2009

Granted

30 Nov 2010

Term ends

3 May 2027

Estimated · how

20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 101 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.

Classification8 codes

G03F 7/0758
Macromolecular compounds containing Si-O, Si-C or Si-N bonds: with silicon- containing groups in the side chains
G03F 7/0046
Photosensitive materials: with perfluoro compounds, e.g. for dry lithography
G03F 7/0397
The macromolecular compound being present in a chemically amplified positive photoresist composition: the macromolecular compound having an…
G03F 7/2041
Exposure; Apparatus therefor: in the presence of a fluid, e.g. immersion; using fluid cooling means

Family

Application11/655,960Parent of this continuation · filed 22 Jan 2007

US 2009/0123880 A1Pre-grant publication · published 14 May 2009

US 7,482,112 B2Parent of this continuation

US 2007/0172768 A1Published application

US 7,842,452 B2This patent

From the US filing history. Foreign family members aren’t listed.

Pattern forming method

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Pattern forming method

Life of this patent

Life of this patent

Abstract

Drawings

Drawings

Claims27

Description18,892 words

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Classification8 codes

Life of this patent

Description18,892 words