US 7,842,451 B2 · Method of forming pattern

Abstract

Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.

Claims19

Dependent claims

A method of forming a pattern, the method comprising:

forming a first organic polymer layer on a substrate on which an underlying layer is formed, the first organic polymer layer serving as an anti-reflection coating layer;
forming a second photosensitive organic polymer pattern on the first organic polymer layer while exposing a portion of the first organic polymer layer;
forming a silicon-containing polymer layer on the exposed portion of first organic polymer and at least a portion of the sidewall surface of the second photosensitive organic polymer pattern;
oxidizing the silicon-containing polymer layer and simultaneously anisotropic-ashing the second photosensitive organic polymer pattern and the first organic polymer layer by an oxygen plasma;
and
etching the underlying layer by using an etching mask of the silicon-containing polymer layer and the first organic polymer layer.

3 more elements

Dependencies are inferred from the claim text.

Method of forming pattern

Life of this patent

Method of forming pattern

Life of this patent

Abstract

Claims19