Dielectric device
AssigneeNGK Insulators, Ltd.
InventorsTsutomu Nanataki, Nobuyuki Kobayashi
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Abstract
The dielectric device includes a substrate, a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is bonded onto the substrate. The dielectric layer is bonded onto the lower electrode. The dielectric layer is obtained through thermal treatment of a film layer formed by spraying of a powdery dielectric material and a fine-particulate metal. In the thus-formed film layer, the metal is dispersed in the matrix of the dielectric material. Thermal treatment of the film layer causes migration of the metal in the film layer. This metal migration causes a lower-electrode-adjacent portion and upper-surface-adjacent portion of the dielectric layer to have different metal contents.
Claims2
A dielectric device comprising:
- a substrate;
- a base electrode which is formed of a conductor film and is provided on the substrate;
- and
- a dielectric layer formed on the base electrode, said dielectric layer comprising free metal,
- wherein the dielectric layer is formed so that the free metal concentration of a first portion of the dielectric layer located between the center of the dielectric layer in a thickness direction thereof and the base electrode is higher than that of a second portion of the dielectric layer located between the center of the dielectric layer and an upper surface thereof, and wherein the metal concentration by volume of the first portion is 2% to 20%, and the metal concentration by volume of the second portion is 5% or less.
Dependencies are inferred from the claim text.