Substrate processing methods
AssigneeTokyo Electron Limited
InventorHiraku Ishikawa
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Abstract
Substrate processing methods involve forming an insulating film of amorphous carbon on a substrate by supplying acetylene gas and hydrogen gas with a volume ratio of 4:3 to 4:1, or alternatively, butyne gas, into a process vessel in which the substrate is accommodated. The methods further involve generating a plasma inside of the process vessel by emitting a microwave. The pressure inside of the process vessel is maintained to be 4.0 Pa or less and the substrate is maintained to be 200° C. or less while the insulating film is formed.
Claims12
A substrate processing method, comprising the steps of:
- forming an insulating film of amorphous carbon on a substrate by supplying acetylene gas and hydrogen gas with a volume ratio of 4:3 to 4:1 into a process vessel in which the substrate is accommodated, and generating a plasma inside of the process vessel by emitting a microwave,
- wherein a pressure inside of the process vessel is maintained to be between 1.33 and 4.0 Pa and the substrate is maintained to be 200° C. or less while the insulating film is formed.
A substrate processing method, comprising the steps of:
- forming an insulating film of amorphous carbon on a substrate by supplying butyne gas into a process vessel in which the substrate is accommodated, and generating a plasma inside of the process vessel by emitting a microwave,
- wherein a pressure inside of the process vessel is maintained to be between 1.33 and 4.0 Pa and the substrate is maintained to be 200° C. or less while the insulating film is formed.
Dependencies are inferred from the claim text.