CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Dai Fukushima, Nobuyuki Kurashima, Susumu Yamamoto, Hiroyuki Yano
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Abstract
A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
Claims11
A polishing method comprising:
- contacting a semiconductor substrate having a metallic film with a polishing pad attached to a turntable;
- and
- supplying a metallic film-CMP slurry having a viscosity of less than 2 mPa·sec onto the polishing pad to polish the metallic film, the metallic film-CMP slurry comprising:
- water;
- 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 40,000;
- an oxidizing agent;
- a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, the first complexing agent containing quinaldinic acid, quinolinic acid, and alkylbenzene sulfonate;
- and
- colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
A method for manufacturing a semiconductor device comprising:
- forming an insulating film above a semiconductor substrate;
- forming a recess in the insulating film;
- depositing a metal inside the recess as well as above the insulating film to form a metallic film;
- and
- removing at least part of the metal which is deposited above the insulating film by CMP using a metallic film-CMP slurry having a viscosity of less than 2 mPa·sec, the metallic film-CMP slurry comprising:
- water;
- 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 40,000;
- an oxidizing agent;
- a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, the first complexing agent containing quinaldinic acid, quinolinic acid, and alkylbenzene sulfonate;
- and
- colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
Dependencies are inferred from the claim text.