Enhanced reliability of wafer-level chip-scale packaging (WLCSP) die separation using dry etching

A method comprising:

• forming a plurality of conducting posts on a front-side of a semiconductor wafer;
• forming a plurality of grooves in said front-side using a dry etchant;
• coating said front-side with an encapsulant layer;
• sawing a plurality of channels to a depth below said plurality of grooves;
• and
• polishing a backside of said semiconductor wafer to said plurality of channels in order to separate a plurality of die formed in said semiconductor wafer.

A method for enhancing reliability of wafer-level chip-scale packaging (WLCSP), said method comprising:

• creating a plurality of wafer-level contacts on a front-side surface of a semiconductor wafer;
• dry etching a plurality of grooves on said front-side surface, said plurality of grooves defining one or more boundaries between a plurality of die within said semiconductor wafer;
• sealing said front-side surface with an encapsulating material;
• sawing through said encapsulating material at said plurality of grooves, said sawing proceeding only partially through said semiconductor wafer;
• and
• separating each of said plurality of die by polishing said backside to remove only partial portion of said semiconductor wafer.