Atomic layer deposition method of depositing an oxide on a substrate

An atomic layer deposition method of depositing an oxide on a substrate comprising:

• chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated;
• contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers;
• and
• successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate comprising InxSnyO on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber simultaneously.

An atomic layer deposition method of depositing an oxide on a substrate comprising:

• chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated;
• contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers;
• and
• successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate comprising InxSnyO on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber at different times.