Mesh structure and field-emission electron source apparatus using the same

A field-emission electron source apparatus comprising:

• a field-emission electron source array;
• a target for performing a predetermined operation using an electron beam emitted from the field-emission electron source array;
• and
• a mesh structure that is disposed between the field-emission electron source array and the target and provided with a plurality of through holes through which the electron beam emitted from the field-emission electron source array passes;
• wherein each of the plurality of through holes has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening, and
• the mesh structure is formed of a silicon-containing material doped with a N-type or P-type material;
• wherein the mesh structure comprises at least two electrode layers and at least one intermediate layer disposed between the at least two electrode layers,
• further comprising a substrate on which the field-emission electron source array is formed,
• wherein the mesh structure has a spacer portion that is formed as one piece with the mesh structure and spaces out the field-emission electron source array and the openings of the plurality of through holes from each other, and
• the mesh structure is provided on the substrate via the spacer portion.

A method for driving a field-emission electron source apparatus comprising

• a field-emission electron source array,
• a target for performing a predetermined operation using an electron beam emitted from the field-emission electron source array, and
• a mesh structure that is disposed between the field-emission electron source array and the target and provided with a plurality of through holes through which the electron beam emitted from the field-emission electron source array passes,
• wherein each of the plurality of through holes has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening,
• the mesh structure is formed of a silicon-containing material doped with a N-type or P-type material,
• the mesh structure comprises at least two electrode layers and at least one intermediate layer disposed between the at least two electrode layers, and
• when a first voltage (V1) indicates a voltage to be applied to a first electrode layer in the at least two electrode layers that is disposed on the side of the field-emission electron source array with respect to the at least one intermediate layer and a second voltage (V2) indicates a voltage to be applied to a second electrode layer in the at least two electrode layers that is disposed on a side of the target with respect to the at least one intermediate layer, an amount of an electron beam that passes through the plurality of through holes in the mesh structure and travels toward the target is varied by changing one or both of the first and second voltages while driving the field-emission electron source apparatus.