Method of forming through-silicon vias
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChuan-Yi Lin, Song-Bor Lee, Ching-Kun Huang, Sheng-Yuan Lin
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stacking structure, wherein the stacking structures in the one or more dielectric layers are vertically aligned. The stacking structures may be, for example, metal rings. The stacking structures are then removed to form a first recess. A second recess is formed by extending the first recess into the substrate. The second recess is filled with a conductive material to form the TSV.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate having the semiconductor device formed thereon;
- forming a first dielectric layer on the semiconductor substrate;
- forming a first interconnect feature in the first dielectric layer, the first interconnect feature being electrically coupled to the semiconductor device;
- forming a second dielectric layer on the first dielectric layer;
- forming a second interconnect feature in the second dielectric layer;
- forming a stacking structure in the second dielectric layer;
- removing the stacking structure, thereby forming a first recess in the second dielectric layer;
- forming a second recess by extending the first recess into at least a portion of the semiconductor substrate;
- and
- filling the second recess with a conductive material.
A method of forming a semiconductor device, the method comprising:
- providing a substrate;
- forming a first dielectric layer over the substrate;
- forming one or more second dielectric layers over the first dielectric layer, the one or more second dielectric layers having a sacrificial stacking structure extending therethrough;
- removing the sacrificial stacking structure, thereby forming a first opening through the one or more second dielectric layers and exposing a portion of the first dielectric layer;
- removing the first dielectric layer along a bottom of the first opening, thereby forming a second opening through the first dielectric layer and exposing an exposed portion of the substrate;
- removing a portion of the substrate along a bottom of the second opening, thereby forming a recess in the substrate;
- and
- filling the recess with a conductive material.
A method of forming a semiconductor device, the method comprising:
- providing a substrate;
- forming a plurality of dielectric layers over the substrate;
- forming a stacking structure in one or more of the plurality of dielectric layers, the stacking structure extending completely through at least one of the plurality of dielectric layers;
- removing the stacking structure, thereby forming a recess extending through the one or more of the plurality of dielectric layers;
- extending the recess into the substrate;
- and
- filling the recess with a conductive material.
Dependencies are inferred from the claim text.