Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices

A hybrid beam deposition method for synthesizing doped metal oxide and metal-based oxide alloy films, comprising the steps of:

• (a) preparing a substrate having a synthesis surface for film synthesis;
• (b) treating the substrate by directing a first rf oxygen plasma stream at the synthesis surface of the substrate under predetermined treatment conditions that include a predetermined dynamical pressure for the rf oxygen plasma stream;
• (c) stabilizing the substrate at a predetermined synthesis temperature;
• (d) further treating the substrate by directing the rf oxygen plasma stream at the synthesis surface of the substrate at a predetermined dynamical pressure for a predetermined period of time;
• (e) implementing film synthesis on the synthesis surface of the substrate by:
• (e1) activating and operating a metal oxide plasma generating subsystem that is configured and operative to interact with a metal oxide target material to generate and direct a high-energy metal, oxide plasma plume at the synthesis surface of the substrate under predetermined synthesis conditions;
• and
• (e2) operating a source material subsystem at a synthesis temperature within a predetermined range to generate and direct a directed stream of elemental dopant material at the synthesis surface of the substrate;
• such that a doped film is synthesized on the substrate;
• (f) terminating doped film synthesis once a predetermined synthesis parameter has been achieved;
• (g) treating the doped film synthesized on the substrate by directing a second rf oxygen plasma stream at the synthesized doped film for a predetermined treatment period at a predetermined dynamical pressure;
• (h) decreasing, upon lapse of the predetermined treatment period, the substrate temperature at a predetermined rate of change to stabilize the substrate at room temperature;
• and
• (i) terminating the second rf oxygen plasma stream in the deposition chamber once the substrate has been stabilized at room temperature;
• wherein the doped film synthesized on the substrate and the substrate in combination define a semiconducting composite structure characterized by the doped film synthesized on the substrate.