Deposition processes for titanium nitride barrier and aluminum

A method for forming a conductive material on a substrate, comprising:

• positioning a substrate within a process chamber, wherein the substrate comprises a dielectric material disposed thereon, the dielectric material comprises an upper surface and apertures formed therein, and each aperture comprises a lower surface and sidewalls;
• depositing a metallic titanium nitride layer on the upper surface of the dielectric material and on the lower surfaces and the sidewalls of the apertures during a first PVD process, wherein the metallic titanium nitride layer comprises a metallic titanium nitride material having the chemical formula of TixNy, where x is within a range from about 1.5 to about 2 and y is about 1;
• and
• depositing a titanium nitride retarding layer on the metallic titanium nitride layer deposited on the upper surface of the dielectric material during a second PVD process, wherein the titanium nitride retarding layer comprises a titanium nitride retarding material having the chemical formula of TixNy, where x is about 1 and y is within a range from about 1 to about 1.2.

A method for forming a conductive material on a substrate, comprising:

• positioning a substrate within a PVD chamber, wherein the substrate comprises a dielectric material disposed thereon, the dielectric material comprises an upper surface and apertures formed therein, and each aperture comprises a lower surface and sidewalls;
• depositing a metallic titanium nitride layer on the upper surface of the dielectric material and on the lower surfaces and the sidewalls of the apertures during a first PVD process within the PVD chamber, the first PVD process comprises:
• flowing nitrogen gas into the PVD chamber at a flow rate of less than about 80 sccm;
• applying a RF bias to the substrate;
• and
• applying a first DC power to a titanium target at a power level within a range from about 20 kW to about 40 kW to ignite a first plasma;
• and
• depositing a titanium nitride retarding layer on the metallic titanium nitride layer deposited on the upper surface of the dielectric material during a second PVD process within the PVD chamber, the second PVD process comprises:
• flowing the nitrogen gas into the PVD chamber at a flow rate of about 80 sccm or greater;
• removing the RF bias from the substrate;
• and
• applying a second first DC power to the titanium target at a power level within a range from about 5 kW to about 25 kW to ignite a second plasma.

A method for forming a conductive material on a substrate, comprising:

• positioning a substrate within a process chamber, wherein the substrate comprises a dielectric material disposed thereon, the dielectric material comprises an upper surface and apertures formed therein, and each aperture comprises a lower surface and sidewalls;
• depositing a metallic titanium nitride layer on the upper surface of the dielectric material and on the lower surfaces and the sidewalls of the apertures during a first PVD process;
• depositing a titanium nitride retarding layer on the metallic titanium nitride layer deposited over the upper surface of the dielectric material while maintaining the lower surface of the apertures substantially free of the titanium nitride retarding layer during a second PVD process;
• depositing a first aluminum layer selectively on exposed portions of the metallic titanium nitride layer while maintaining the titanium nitride retarding layer free of the first aluminum layer during a CVD process;
• and
• depositing a second aluminum layer on the titanium nitride retarding layer and on the exposed portions of the first aluminum layer during another PVD process.

A method for forming a conductive material on a substrate, comprising:

• positioning a substrate within a PVD chamber, wherein the substrate comprises a dielectric material disposed thereon, the dielectric material comprises an upper surface and apertures formed therein, and each aperture comprises a lower surface and sidewalls;
• depositing a metallic titanium nitride layer on the upper surface of the dielectric material and on the lower surfaces and the sidewalls of the apertures during a PVD process, wherein the metallic titanium nitride material has the chemical formula of TixNy, where x is within a range from about 1.5 to about 2 and y is about 1, and the PVD process comprises:
• flowing nitrogen gas into the PVD chamber at a flow rate of about 55 sccm or less:
• applying a RF bias to the substrate;
• and
• applying a first DC power to a titanium target at a power level within a range from about 25 kW to about 35 kW to ignite a plasma;
• depositing a titanium nitride retarding layer on the metallic titanium nitride layer deposited over the upper surface of the dielectric material while maintaining the lower surface of the apertures substantially free of the titanium nitride retarding layer during a second PVD process;
• transferring the substrate into a CVD chamber;
• and
• depositing an aluminum layer on the metallic titanium nitride layer during a CVD process.