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US 7,812,459 B2Granted
Three-dimensional integrated circuits with protection layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Wen-Chih Chiou, Weng-Jin Wu, Hung-Jung Tu, Ku-Feng Yang
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Abstract
A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
Claims12
A semiconductor structure comprising:
- a first die comprising:
- a first substrate;
- and
- a first bonding pad over the first substrate;
- a second die having a first surface and a second surface opposite the first surface, wherein the second die comprises a second bonding pad on the first surface and bonded to the first bonding pad of the first die through flip-chip bonding, and wherein the first die and the second die have a gap therebetween;
- and
- a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die, wherein the protection layer seals the gap between the first die and the second die.
4 more elements
Dependencies are inferred from the claim text.