Multibeam laser apparatus and image forming device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorWoon-ho Seo
Life of this patent
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Abstract
A multibeam laser apparatus and an image forming device using the same. The multibeam laser beam apparatus includes a common electrode unit, a plurality of light source units to emit light using the common electrode unit, and an isolating unit to interconnect the common electrode unit and the plurality of light source units. With such configuration for example, the laser apparatus can reduce distances between the respective light source units and the number of the electrodes, and thus reduce the number of wires and legs to produce a compact chip.
Claims25
A multibeam laser apparatus, comprising:
- a common electrode unit;
- a plurality of light source units using the common electrode unit to emit light;
- and
- an isolating unit to interconnect the common electrode unit and the plurality of light source units,
- wherein the plurality of light source units are isolated by at least two grooves of varying depth extending into the isolating unit, and
- wherein the isolating unit comprises a semiconductor substrate in which a predetermined dopant is doped, and a doping density of the dopant is increased according to a distance from the common electrode unit.
An image forming device to use a multibeam laser apparatus, the multibeam laser apparatus comprising:
- a common electrode unit;
- a plurality of light source units to emit light using the common electrode;
- and
- an isolating unit to interconnect the common electrode unit and the plurality of light
- source units according to a varying doping density, and to prevent an interference between the plurality of light source units according to at least two grooves of varying depth,
- wherein the isolating unit comprises a semiconductor substrate in which a predetermined dopant is doped, and a doping density of the dopant is increased according to a distance from the common electrode unit.
A multibeam laser apparatus, comprising:
- a common electrode unit;
- a plurality of light source units to emit light driven by the common electrode;
- an isolating unit to interconnect the common electrode unit and the plurality of light source units,
- wherein the isolating unit comprises a semiconductor substrate which is doped with a dopant having an increasing doping density along a lateral distance in a direction away from the common electrode unit to correspond to the respective light source units.
A multibeam laser apparatus, comprising:
- a common electrode unit;
- a plurality of light source units to emit light driven by the common electrode;
- a substrate having a surface;
- an isolating unit on the surface of the substrate, the isolating unit to interconnect the common electrode unit and the plurality of light source units;
- wherein the plurality of light source units are isolated by one or more grooves extending into the isolating unit,
- wherein one or more notches are formed in at least one of the light source units and in the isolating unit to permit deposition of a high reflective dielectric coating on the surface of the substrate, and
- wherein the isolating unit comprises a semiconductor substrate in which a predetermined dopant is doped, and a doping density of the dopant is increased according to a distance from the common electrode unit.
A multibeam laser apparatus, comprising:
- at least one common electrode unit;
- a plurality of light source units using the at least one common electrode unit to emit light;
- an isolating unit to interconnect the at least one common electrode unit and the plurality of light source units;
- and
- an insulator substrate to come in contact with a lower surface of the isolating unit,
- wherein the plurality of light source units are isolated by at least two grooves of varying depth extending at least to the isolating unit and the isolating unit comprises a semiconductor substrate which is doped with a dopant having an increasing doping density along a lateral distance in a direction away from the at least one common electrode unit to correspond to the respective light source units.
A multibeam laser apparatus, comprising:
- a common electrode unit;
- a plurality of light source units using the common electrode unit to emit light;
- and
- a single isolating unit to interconnect the common electrode unit and at least two adjacent light source units of the plurality of light source units,
- wherein the plurality of light source units are isolated by at least two grooves of varying depth extending toward the isolating unit, and
- wherein the isolating unit comprises a semiconductor substrate in which a predetermined dopant is doped, and a doping density of the dopant is increased according to a distance from the common electrode unit.
An isolating unit of a multibeam laser apparatus having a common electrode and a plurality of light source units, the isolating unit comprising:
- a dopant doped substrate;
- and
- a plurality of connectors to interconnect the common electrode unit and the plurality of light source units and to prevent an interference between the plurality of light source units according to at least two grooves of varying depth,
- wherein a doping density of the dopant increases as a distance from the common electrode unit increases.
Dependencies are inferred from the claim text.