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US 7,804,872 B2Granted
Nitride semiconductor laser element
AssigneeNichia Corporation
InventorTomonori Morizumi
Life of this patent
Estimating the term…
Abstract
A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers.
Claims21
A nitride semiconductor laser element comprising:
- a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and
- a first protective film that is substantially in contact with at least one end face of the cavity,
- the first protective film having a film structure in which bright and dark parts including a region substantially in contact with the active layer and a region substantially in contact with the first nitride semiconductor layer and the second nitride semiconductor layer are observed under scanning transmission electron microscopy, the regions with the bright and dark parts of the first protective film overlapping each other as viewed in a lamination direction of the first nitride semiconductor layer, the active layer and the second nitride semiconductor layer,
- the bright or dark part of the region substantially in contact with the active layer being disposed continuously in the thickness direction of the first protective film.
1 more element
A nitride semiconductor laser element comprising:
- a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and
- a first protective film that is in contact with at least one end face of the cavity,
- the first protective film having a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first nitride semiconductor layer and the second nitride semiconductor layer are observed under scanning transmission electron microscopy,
- the bright or dark part of the region in contact with the active layer being wider on the outside of the element than on the cavity end face side.
1 more element
A nitride semiconductor laser element comprising:
- a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and
- a first protective film that is in contact with at least one end face of the cavity, wherein
- the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first nitride semiconductor layer and the second nitride semiconductor layer are observed under scanning transmission electron microscopy, the first protective film being covered with a second protective film, and
- scanning transmission electron microscopy reveals higher or lower brightness in the second protective film, the region in contact with the active layer, and the region in contact with the first nitride semiconductor layer and the second nitride semiconductor layer in this order.
1 more element
A nitride semiconductor laser element comprising:
- a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and
- a first protective film that is substantially in contact with at least one end face of the cavity,
- the first protective film having a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first nitride semiconductor layer and the second nitride semiconductor layer as the crystallinity changes in regions between the portion adjacent to the active layer and the portions adjacent to the first nitride semiconductor layer and the second nitride semiconductor layer along a lamination direction of the first nitride semiconductor layer, the active layer and the second nitride semiconductor layer.
A nitride semiconductor laser element comprising:
- a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and
- a first protective film that is in contact with at least one end face of the cavity,
- the first protective film having a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first nitride semiconductor layer and the second nitride semiconductor layer,
- the portion adjacent to the active layer having substantially the same crystallinity in the thickness direction of the first protective film,
- the portion adjacent to the active layer having substantially the same crystallinity being wider on the outside of the element than on the cavity end face side.
2 more elements
A nitride semiconductor laser element comprising:
- a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces;
- and
- a first protective film that is in contact with at least one end face of the cavity;
- and
- a second protective film formed on the first protective film,
- the first protective film having a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first nitride semiconductor layer and the second nitride semiconductor layer,
- the crystallinity being better at the portions adjacent to the first and second nitride semiconductor layers, the portion adjacent to the active layer, and the second protective film, in this order.
4 more elements
Dependencies are inferred from the claim text.