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US 7,804,870 B2Granted
Semiconductor optical device and manufacturing method thereof
AssigneesFujitsu Limited, Sumitomo Electric Device Innovations, Inc.
InventorsKan Takada, Mitsuru Ekawa, Tsuyoshi Yamamoto, Tatsuya Takeuchi
Life of this patent
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Abstract
In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×1018 cm−3 and the Fe concentration is 1.8×1017 cm−3. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×1016 cm−3. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.
Claims12
A semiconductor optical device comprising:
- a semiconductor substrate;
- a mesa portion formed on said semiconductor substrate and including a p-type semiconductor layer to which a p-type impurity is added;
- and
- a burying layer burying said mesa portion and made of a group III-V compound semiconductor to which an impurity generating a deep acceptor level is added,
- wherein said p-type semiconductor layer has a higher concentration of the impurity generating a deep acceptor level, compared to said burying layer;
- and
- a concentration of the impurity forming a deep acceptor level in the p-type semiconductor layer is 2 to 8 times higher than a concentration of the impurity forming a deep acceptor level in said burying layer.
4 more elements
Dependencies are inferred from the claim text.