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US 7,804,869 B2Granted
Gallium nitride based semiconductor device with electron blocking layer
AssigneeAgere Systems Inc.
InventorJoseph Michael Freund
Life of this patent
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Abstract
A semiconductor device comprises an n-side waveguide layer, an active layer in contact with the n-side waveguide layer and a p-side waveguide layer in contact with the active layer. An electron blocking layer is in contact with the p-side waveguide layer and comprises a first composition of two elements from group III of the periodic table and an element from group V of the periodic table. A cladding layer includes a cladding sublayer that is in contact with the electron blocking layer. The cladding sublayer comprises a second composition of two elements from group III of the periodic table and an element from group V of the periodic table. The second composition is different from the first composition.
Claims22
A semiconductor device comprising:
- an n-side waveguide layer;
- an active layer in contact with the n-side waveguide layer;
- a p-side waveguide layer in contact with the active layer;
- an electron blocking layer in contact with the p-side waveguide layer, the electron blocking layer comprising a first composition of two elements from group III of the periodic table and an element from group V of the periodic table;
- and
- a cladding layer, the cladding layer including a first cladding sublayer in contact with the electron blocking layer and in contact with a second cladding sublayer, the first cladding sublayer being disposed between the second cladding sublayer and the electron blocking layer;
- wherein the first cladding sublayer comprises a second composition of two elements from group III of the periodic table and an element from group V of the periodic table, the second composition being different from the first composition;
- and
- wherein the first cladding sublayer has a higher conduction band level than the second cladding sublayer.
6 more elements
A semiconductor device comprising:
- an n-side waveguide layer;
- an active layer in contact with the n-side waveguide layer;
- a p-side waveguide layer in contact with the active layer;
- an electron blocking layer in contact with the p-side waveguide layer, the electron blocking layer comprising aluminum gallium nitride of a first composition;
- and
- a cladding layer, the cladding layer including a first cladding sublayer in contact with the electron blocking layer and in contact with a second cladding sublayer, the first cladding sublayer being disposed between the second cladding sublayer and the electron blocking layer;
- wherein the first cladding sublayer comprises aluminum gallium nitride of a second composition different from the first composition;
- and
- wherein the first cladding sublayer has a higher conduction band level than the second cladding sublayer.
6 more elements
A method of forming a semiconductor device, the method comprising the steps of:
- forming an n-side waveguide layer;
- forming an active layer in contact with the n-side waveguide layer;
- forming a p-side waveguide layer in contact with the active layer;
- forming an electron blocking layer in contact with the p-side waveguide layer, the electron blocking layer comprising a first composition of two elements from group III of the periodic table and an element from group V of the periodic table;
- and
- forming a cladding layer, the cladding layer including a first cladding sublayer in contact with the electron blocking layer and in contact with a second cladding sublayer, the first cladding sublayer being disposed between the second cladding sublayer and the electron blocking layer;
- wherein the first cladding sublayer comprises a second composition of two elements from group III of the periodic table and an element from group V of the periodic table, the second composition being different from the first composition;
- and
- wherein the first cladding sublayer has a higher conduction band level than the second cladding sublayer.
6 more elements
An apparatus including:
- a semiconductor device comprising:
- an n-side waveguide layer;
- an active layer in contact with the n-side waveguide layer;
- a p-side waveguide layer in contact with the active layer;
- an electron blocking layer in contact with the p-side waveguide layer, the electron blocking layer comprising a first composition of two elements from group III of the periodic table and an element from group V of the periodic table;
- and
- a cladding layer, the cladding layer including a first cladding sublayer in contact with the electron blocking layer and in contact with a second cladding sublayer, the first cladding sublayer being disposed between the second cladding sublayer and the electron blocking layer;
- wherein the first cladding sublayer comprises a second composition of two elements from group III of the periodic table and an element from group V of the periodic table, the second composition being different from the first composition;
- and
- wherein the first cladding sublayer has a higher conduction band level than the second cladding sublayer;
- and
- control circuitry, the control circuitry operative to control the semiconductor device.
9 more elements
A semiconductor device comprising:
- an n-side waveguide layer;
- an active layer in contact with the n-side waveguide layer;
- a p-side waveguide layer in contact with the active layer;
- an electron blocking layer in contact with the p-side waveguide layer, the electron blocking layer comprising a composition of three elements from group III of the periodic table and an element from group V of the periodic table;
- and
- a cladding layer, the cladding layer including a first cladding sublayer in contact with the electron blocking layer and in contact with a second cladding sublayer, the first cladding sublayer being disposed between the second cladding sublayer and the electron blocking layer;
- wherein the first cladding sublayer comprises a second composition of two elements from group III of the periodic table and an element from group V of the periodic table, the second composition being different from the first composition;
- and
- wherein the first cladding sublayer has a higher conduction band level than the second cladding sublayer.
6 more elements
Dependencies are inferred from the claim text.