Flash memory device and program recovery method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsMoo-Sung Kim, Young-Ho Lim
Life of this patent
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Abstract
A method of programming a flash memory includes programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage, lowering the first voltage of the selected word line to a third voltage after programming the memory cells connected to the selected word line, the third voltage being lower than the first voltage, and recovering a fourth voltage of the selected word line and the non-selected word lines, the fourth voltage being lower than the second and third voltages.
Claims20
A method of programming a flash memory, comprising:
- programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage;
- lowering the first voltage of the selected word line to a third voltage after programming the memory cells connected to the selected word line, the third voltage being lower than the first voltage;
- and
- recovering a fourth voltage of the selected word line and the non-selected word lines, the fourth voltage being lower than the second and third voltages.
A method of programming a NAND flash memory, comprising:
- applying a program voltage for programming memory cells to a selected word line and a pass voltage to non-selected word lines;
- lowering the program voltage of the selected word line to the pass voltage after programming the memory cells connected to the selected word line;
- and
- recovering a ground voltage of the selected word line and the non-selected word lines.
A flash memory device, comprising:
- a memory cell array including a plurality of cell strings, each cell string including a plurality of memory cells;
- a decoder connected to the memory cells through a word line, the decoder configured to apply a first voltage to a selected word line and a second voltage to non-selected word lines during a program operation, the second voltage being lower than the first voltage;
- and
- a high voltage generation and control circuit configured to provide the first and second voltages,
- wherein the high voltage generation and control circuit is configured to lower the first voltage of the selected word line to a third voltage and recover a fourth voltage from the second and third voltages of the selected word line and the non-selected word lines during a program recovery operation, the third voltage being lower than the first voltage, the fourth voltage being lower than the second and third voltages.
A flash memory system, comprising:
- a flash memory device;
- and
- a memory controller configured to control the flash memory device,
- wherein the flash memory device includes:
- a memory cell array having a plurality of cell strings, each cell string including a plurality of memory cells;
- a decoder connected to the memory cells through a word line to apply a first voltage to a selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage;
- and
- a high voltage generation and control circuit providing the first and second voltages,
- wherein the high voltage generation and control circuit lowers the first voltage of the selected word line into a third voltage and then recovers a fourth voltage of the selected word line and the non-selected word lines during a program recovery operation, the third voltage being lower than the first voltage, the fourth voltage being lower than the second and third voltages.
Dependencies are inferred from the claim text.