Diode assisted switching spin-transfer torque memory unit
AssigneeSeagate Technology LLC
InventorsXuguang Wang, Yiran Chen, Dimitar V. Dimitrov, Hongyue Liu, Xiaobin Wang
Life of this patent
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Abstract
A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
Claims21
A memory unit comprising:
- a magnetic tunnel junction data cell electrically coupled to a bit line and a source line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell;
- a transistor electrically coupled between the magnetic tunnel junction data cell and the bit line or source line, the transistor is electrically coupled to a word line;
- and
- a diode in thermal contact with the magnetic tunnel junction data cell, the diode is electrically coupled to a diode line.
A spin-transfer torque memory unit comprising:
- a bit line;
- a source line;
- a magnetic tunnel junction data cell electrically coupled to the bit line and the source line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell;
- a transistor electrically coupled between the magnetic tunnel junction data cell and the bit line or source line;
- and
- a diode in electrical contact with the magnetic tunnel junction data cell.
A method of switching a resistance state of a magnetic tunnel junction data cell comprising the steps of:
- determining that a magnetic tunnel junction data cell resistance state is to be switched from a high resistance state to a low resistance state;
- passing a first polarized write current through the magnetic tunnel junction data cell, at least a portion of the first polarized write current is provided by a transistor being electrically coupled to the magnetic tunnel junction data cell;
- and
- assisting the high resistance state to a low resistance state switch by passing a current through a diode in thermal contact with the magnetic tunnel junction data cell.
Dependencies are inferred from the claim text.