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US 7,804,704 B2Granted
PMC memory with improved retention time and writing speed
AssigneeCommissariat a l'Energie Atomique
InventorVeronique Sousa
Life of this patent
Estimating the term…
Abstract
A PMC memory including: a memory cell, the memory cell including, an active zone, a heating element disposed outside of the active zone, and at least two contacts that apply a writing voltage to the memory cell, wherein the heating element transitionally heats the memory cell-during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process.
Claims21
A PMC memory comprising:
- a memory cell, said memory cell including,
- an active zone,
- a heating element disposed outside of the active zone, and
- at least two contacts that apply a writing voltage to the memory cell,
- wherein the heating element transitionally heats the memory cell during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process.
2 more elements
A PMC memory comprising:
- a memory cell, said cell including,
- an inert cathode,
- an active zone including a solid electrolyte that includes a chalcogenide material,
- at least two contacts that apply a writing voltage to the cell, and
- a heating element disposed outside of the active zone that transitionally heats the memory cell during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process, and said heating element being in contact with the inert cathode.
2 more elements
A PMC memory comprising:
- a memory cell, said memory cell including,
- an inert cathode,
- an active zone including a solid electrolyte that includes a chalcogenide material,
- at least two contacts that apply a writing voltage to the memory cell, and
- a heating element disposed outside of the active zone that transitionally heats the memory cell during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process, and said heating element being separated from said inert cathode by at least one of the at least two contacts.
2 more elements
Dependencies are inferred from the claim text.