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US 7,804,703 B2Granted
Phase change memory device having Schottky diode and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDae-Won Ha, Gi-Tae Jeong
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Abstract
A phase change memory device includes wordlines extending along a direction on a semiconductor substrate. Low concentration semiconductor patterns are disposed on the wordlines. Node electrodes are disposed on the low concentration semiconductor patterns. Schottky diodes are disposed between the low concentration semiconductor patterns and the node electrodes. Phase change resistors are disposed on the node electrodes.
Claims18
A semiconductor memory device comprising:
- a wordline extending along a direction on a semiconductor substrate;
- a first semiconductor pattern disposed on the wordline;
- a node electrode disposed on the first semiconductor pattern;
- a Schottky diode formed between the first semiconductor pattern and the node electrode;
- and
- a phase change resistor disposed on the node electrode,
- wherein the wordline comprises a metal, the semiconductor memory device further comprising a second semiconductor pattern disposed between the first semiconductor pattern and the wordline.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate including a cell array region and a peripheral circuit region;
- a transistor disposed within the peripheral circuit region;
- a wordline disposed within the cell array region;
- a first contact plug disposed within the peripheral circuit region and electrically connected to the transistor;
- a plurality of first semiconductor patterns, wherein one of the plurality of first semiconductor patterns is disposed on the wordline and another one of the plurality of first semiconductor patterns is disposed on the contact plug;
- a node electrode disposed within the cell array region and on the one of the plurality of first semiconductor patterns;
- a Schottky diode formed between the one of the plurality of first semiconductor patterns and the node electrode;
- and a phase change resistor disposed within the cell array region and on the node electrode.
5 more elements
A semiconductor memory device comprising:
- a wordline extending along a direction on a semiconductor substrate;
- a first semiconductor pattern disposed on the wordline;
- a second semiconductor pattern disposed between the first semiconductor pattern and the wordline;
- a node electrode disposed on the first semiconductor pattern;
- a Schottky diode formed between the first semiconductor pattern and the node electrode;
- and
- a phase change resistor disposed on the node electrode,
- wherein the first semiconductor pattern and second semiconductor pattern are directly connected to each other and extend along the direction.
5 more elements
Dependencies are inferred from the claim text.