Changing an electrical resistance of a resistor
AssigneeInternational Business Machines Corporation
InventorsArne W. Ballantine, Cyril Cabral, Jr., Daniel C. Edelstein, Anthony K. Stamper
Life of this patent
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Abstract
An electrical structure. The electrical structure includes a resistor having a length L and an electrical resistance R(t) at a time t; and a laser radiation directed onto a portion of the resistor, wherein the portion of the resistor includes a fraction F of the length L, wherein the laser radiation heats the portion of the resistor such that the electrical resistance R(t) instantaneously changes at a rate dR/dt, and wherein the resistor is coupled to a semiconductor substrate.
Claims14
An electrical resistor of length L, comprising N layers denoted as layers 1, 2, . . . , N:
- wherein a portion of the resistor includes a fraction F of the length L;
- wherein N is at least=2;
- wherein layer I includes an electrically conductive material MI for I=1, 2, . . . N;
- wherein layer J is in electrically conductive contact with layer J+1 for J=1, 2, . . . , N−1;
- and
- wherein a cell CK,K+1 couples a cell CK′ of the layer K to a cell CK+1′ of the layer K+1, wherein the cell CK′ is totally within the portion of the resistor and includes the material MK, wherein the cell CK+1′ is totally within the portion of the resistor and includes the material MK+1, wherein the cell CK,K+1 is totally within the portion of the resistor and includes an electrically conductive material MK,K+1 that comprises a chemical combination of the material MK from the layer K and the material MK+1 from the layer K+1, and wherein K is selected from the group consisting of 1, 2, . . . , N−1, and combinations thereof.
An electrical resistor of length L, comprising N layers denoted as layers 1, 2, . . . , N:
- wherein a portion of the resistor includes a fraction F of the length L;
- wherein N is at least 2;
- wherein layer I includes an electrically conductive material MI for I=1, 2, . . . N;
- wherein layer J is in electrically conductive contact with layer J+1 for J=1, 2, . . . , N−1;
- wherein a cell CK,K+1 couples a cell CK′ of the layer K to a cell CK+1′ of the layer K+1, wherein the cell CK′ is totally within the portion of the resistor and includes the material MK, wherein the cell CK+1′ is totally within the portion of the resistor and includes the material MK+1, wherein the cell CK,K+1 is totally within the portion of the resistor and includes an electrically conductive material MK,K+1 that comprises a chemical combination of the material MK from the layer K and the material MK+1 from the layer K+1, wherein K is selected from the group consisting of 1, 2, . . . , N−1, and combinations thereof;
- wherein a first bounding surface of the cell CK,K+1 is in direct mechanical contact with the cell CK′;
- wherein a second bounding surface of the cell CK,K+1 is in direct mechanical contact with the cell CK+1′,wherein the first bounding surface of the cell CK,K+1 is opposite to and parallel to the second bounding surface of the cell CK,K+1;
- and wherein the electrically conductive material MK,K+1 is distributed throughout the cell CK,K+1.
An electrical resistor of length L, comprising:
- a first portion having a length L1, wherein the first portion includes at least one cell having an electrically conductive material with a first structure;
- and
- a first portion having a length L1, wherein the first portion includes at least one cell having a first electrically conductive material with a first structure;
- and
- a second portion of length L2 such that L2 =L−L1, wherein the second portion includes a fraction F of the length L such that F=L2/L, wherein the second portion includes a structured cell having a second electrically conductive material with a second structure, and wherein the second electrically conductive material with the second structure has resulted from a laser heating of the first electrically conductive material with the first structure.
- wherein:
- the first structure includes an amorphous metallic material structure and the second structure includes a crystalline metallic structure, said amorphous metallic material structure including an amorphous metallic material selected from the group consisting of titanium nitride, tantalum silicon nitride, and tungsten nitride;
- or
- the first electrically conducting material includes a polycrystalline metal having a first crystalline phase and the second electrically conducting material includes the polycrystalline metal having a second crystalline phase, said polycrystalline metal including tantalum, said first crystalline phase including a tetragonal phase, said second crystalline phase including a body-centered cubic phase;
- or
- the first structure includes a metallic oxide selected from the group consisting of a metal oxide and a metallic alloy oxide and the second structure includes a metallic component, said metallic component being the metal if the metallic oxide is the metal oxide, said metallic component being the metallic alloy if the metallic oxide is the metallic alloy oxide, said metal oxide being platinum oxide, palladium oxide, irridium oxide, or platinum palladium oxide.
Dependencies are inferred from the claim text.