Circuit architecture for radiation resilience
AssigneeHoneywell International Inc.
InventorDavid O. Erstad
Life of this patent
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Abstract
A system and method for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation and/or bias dependent degradation are described. The device is replicated at least once and at least one switching mechanism is used to cycle between the devices such that only one device is operating normally. While the first device is operating normally, the other devices are biased. The bias condition may slow, eliminate, or even reverse device shifts that occur due to total ionizing dose radiation or bias effects.
Claims19
A system for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation or bias dependent degradation, comprising in combination:
- a first device;
- a second device substantially the same as the first device;
- and
- a switching mechanism that cycles between selecting one of the first device and the second device to operate in a normal operating condition, wherein the one of the first or the second device not selected to operate in the normal operating condition is operated to minimize radiation effects.
A system for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation or bias dependent degradation, comprising in combination:
- a first diode;
- a second diode substantially similar to the first diode;
- a first switching mechanism that selects a first input current to provide to the first diode wherein the first input current is configured to cause the first diode to operate in a first operating mode;
- a second switching mechanism that selects a second input current to provide to the second diode, wherein the second input current has a magnitude greater than the first input current to cause the second diode to operate in an operating mode that is less susceptible to radiation than the first operating mode.
A system for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation or bias dependent degradation, comprising in combination:
- a first transistor;
- a second transistor substantially similar to the first transistor;
- a first switching mechanism that selects a first input voltage to provide to the first transistor, wherein the first input voltage is configured to cause the first transistor to operate in a first operating mode;
- a second switching mechanism that selects a second input voltage to provide to the second transistor, wherein the second input voltage has a magnitude greater than the first input voltage to cause the second transistor to operate in an operating mode that is less susceptible to radiation than the first operating mode.
A method for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation or bias dependent degradation, comprising:
- switching between one of a first device and a second device to operate in a normal operating condition, wherein the second device is substantially the same as the first device;
- and
- connecting an input to the one of the first or the second device not selected to operate in the normal operating condition, the connected input causing the one of the first or the second device not selected to operate in the normal operating condition to operate in a second operating condition that is less susceptible to radiation than the normal operating condition.
Dependencies are inferred from the claim text.