Apparatus and method to generate plasma

An apparatus to generate plasma, comprising a chamber having a plasma generating space defined therein, the apparatus further comprising:

• a lower electrode positioned within the chamber, and having a table to support a semiconductor substrate;
• an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source together with the lower electrode;
• a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, the second plasma generating source comprising:
• a dome-shaped dielectric plate connected to the outer circumference of the upper electrode to constitute an upper surface of the chamber together with the upper electrode, and
• a coil electrode mounted on an upper surface of the dielectric plate;
• and
• a power supply to supply power to the first and second plasma generating sources.

An apparatus to generate plasma, the apparatus comprising:

• a first chamber comprising:
• a lower electrode positioned within the chamber and having a table to support a semiconductor substrate disposed thereon, and
• an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source together with the lower electrode;
• a second chamber having a predetermined height, and being positioned on an upper surface of the first chamber so as to surround an outer circumference of the upper electrode;
• an opening formed through the upper surface of the first chamber and a lower surface of the second chamber to communicate the first chamber with the second chamber;
• a second plasma generating source positioned on an upper surface of the second chamber;
• and
• a power supply to supply power to the first and second plasma generating sources.

A plasma generating apparatus, comprising:

• a first chamber defining a reaction space therein;
• a first plasma generating source comprising a lower and an upper electrode disposed within the first chamber and position to face each other and defining a first plasma generation region therebetween;
• a second plasma generating source comprising a coil electrode and disposed at an outer circumference of the upper electrode and defining a second plasma generating region at a predetermined distance from the first plasma generation region;
• and
• a plurality of power sources to supply an RF power to the first and second plasma generating sources,
• wherein electrons of the plasma generated in the second plasma generating region diffuse the predetermined distance to the reaction space having a lower electron temperature.