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US 7,804,155 B2Granted
Vertical resistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMin-Hwa Chi
Life of this patent
Estimating the term…
Abstract
A vertical resistor. A substrate includes a trench filled by an isolation layer. A first doped-type region and a second doped-type region are formed on both sides of the trench. The first doped-type region receives a control bias, the second doped-type region receives a reference bias, and a resistance between the second doped-type region and the substrate is adjusted in response to a voltage difference between the control bias and the reference bias.
Claims18
A vertical resistor, comprising:
- a substrate comprising a trench;
- an isolation layer filling the trench;
- a first doped-type region and a second doped-type region formed on both sides of the trench;
- and
- a lightly doped drain junction formed on the second doped-type region, wherein the first doped-type region receives a control bias, the second doped-type region receives a reference bias through the lightly doped drain junction, and a resistance between the second doped-type region and the substrate is adjusted in response to a voltage difference between the biases from the first doped-type region and the second doped-type region.
2 more elements
A vertical resistor, comprising:
- a substrate comprising a trench;
- an isolation layer filling the trench;
- a first doped-type region and a second doped-type region formed on both sides of the trench;
- and
- an accumulation region in the second doped-type region, wherein the first doped-type region receives a control bias, the second doped-type region receives a reference bias, and a resistance between the second doped-type region and the substrate is adjusted in response to a voltage difference between the control bias and the reference bias.
2 more elements
Dependencies are inferred from the claim text.