Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics

A memory array, comprising:

• a number of access transistors, comprising:
• a first and second source/drain region;
• a body region located between the first and second source/drain regions, wherein a surface portion of the body region has a surface roughness of approximately 0.6 nm;
• a cobalt-titanium alloy oxide dielectric layer coupled to the surface portion of the body region;
• a gate coupled to the cobalt-titanium alloy oxide dielectric layer;
• a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors;
• and
• a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors.

An information handling device, comprising:

• a processor;
• a memory array, comprising:
• a number of access transistors, comprising:
• a first and second source/drain region;
• a body region located between the first and second source/drain regions, wherein a surface portion of the body region has a surface roughness of approximately 0.6 nm;
• a cobalt-titanium alloy oxide dielectric layer coupled to the surface portion of the body region;
• a gate coupled to the cobalt-titanium alloy oxide dielectric layer;
• a number of wordlines coupled to a number of the gates of the number of access transistors;
• a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors;
• a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors;
• and
• a system bus coupling the processor to the memory device.

A transistor formed by the process, comprising:

• forming a body region coupled between a first source/drain region and a second source/drain region;
• evaporation depositing a metal alloy layer on the body region, to form a surface portion of the body region has a surface roughness of approximately 0.6 nm;
• oxidizing the metal alloy layer to form a metal oxide layer on the body region;
• and
• coupling a gate to the metal oxide layer.