Semiconductor element structure and method for making the same
AssigneeUnited Microelectronics Corp.
InventorsTian-Fu Chiang, Li-Wei Cheng, Che-Hua Hsu, Chih-Hao Yu, Cheng-Hsien Chou, Chien-Ming Lai, Yi-Wen Chen, Chien-Ting Lin, Guang-Hwa Ma
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Abstract
A semiconductor element structure includes a first MOS having a first high-K material and a first metal for use in a first gate, a second MOS having a second high-K material and a second metal for use in a second gate and a bridge channel disposed in a recess connecting the first gate and the second gate for electrically connecting the first gate and the second gate, wherein the bridge channel is embedded in at least one of the first gate and the second gate.
Claims8
A semiconductor element structure, comprising:
- a first MOS having a first high-K material and a first metal for use in a first gate;
- a second MOS having a second high-K material and a second metal for use in a second gate;
- and
- a bridge channel, disposed in a recess connecting said first gate and said second gate for electrically connecting said first gate and said second gate, wherein said bridge channel is embedded in at least one of said first metal and said second metal.
Dependencies are inferred from the claim text.