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US 7,804,139 B2Granted
Device having conductive material disposed in a cavity formed in an isolation oxide disposed in a trench
AssigneeMicron Technology, Inc.
InventorsFernando Gonzalez, Chandra Mouli
Life of this patent
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Abstract
Devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an isolation oxide. Cavities are formed in the isolation oxide and filled with a conductive material, such a doped polysilicon. Doped regions may be formed in the substrate directly adjacent the conductive material to form vertical junctions between the polysilicon and the exposed substrate at the trench sidewalls.
Claims17
A device comprising:
- a substrate having a plurality of trenches formed therein;
- an isolation oxide disposed within each of the plurality of trenches, the isolation oxide comprising cavities formed therein along the junction between the substrate and the isolation oxide;
- a conductive material disposed in each of the cavities;
- a plurality of doped regions in the substrate arranged directly adjacent to the conductive material;
- and
- a wordline stack disposed directly over the plurality of doped regions in the substrate.
3 more elements
A device comprising:
- a substrate having a trench formed therein, wherein the trench comprises a first sidewall and a second sidewall;
- an isolation oxide disposed within the trench, the isolation oxide having each of a first cavity and a second cavity formed therein, wherein the first cavity is formed along the first sidewall, and wherein the second cavity is formed along the second sidewall;
- a conductive material disposed in each of the first cavity and the second cavity;
- a first doped region along the first sidewall of the trench;
- a second doped region along the second sidewall of the trench;
- and
- a wordline stack disposed directly over the first doped region.
4 more elements
A device comprising:
- a substrate comprising a plurality of trenches formed therein, wherein a wordline stack is formed above and between each of the plurality of trenches;
- an oxide layer disposed on the surface of the substrate and in each of the plurality of trenches;
- an isolation oxide disposed in each of the plurality of trenches and over the oxide layer;
- and
- a doped polysilicon material disposed in a cavity formed in the isolation oxide and the oxide layer.
2 more elements
Dependencies are inferred from the claim text.