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US 7,804,135 B2Granted
Integrated semiconductor diode arrangement and integrated semiconductor component
AssigneeInfineon Technologies AG
InventorsNils Jensen, Andreas Meiser
Life of this patent
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Abstract
An integrated semiconductor diode arrangement is provided. The arrangement includes an anode region and a cathode region that are formed in a semiconductor material region. The anode region has an arrangement of alternately occurring and directly adjacent first and second anode zones, which alternate in their conductivity type. The anode region furthermore has a first particular anode zone of the second conductivity type, the lateral extent of which is comparatively larger than that of the further anode zones of the same conductivity type.
Claims19
An integrated semiconductor diode arrangement comprising:
- an anode region of a first conductivity type;
- a cathode region of a second conductivity type different from the first conductivity type;
- wherein the anode region and the cathode region are formed in a semiconductor material region and are arranged in a first extension direction;
- the anode region further comprising an arrangement in a second and lateral extension direction in a cross section of alternately occurring first and second anode zones of the first conductivity type and of the second conductivity type, respectively, which are directly adjacent to one another,
- wherein the arrangement of the anode zone has an alternating sequence of three to ten anode zones;
- the anode region further comprising as part of the arrangement of the anode zones a first particular anode zone of the second conductivity type, which has a comparatively larger lateral extent than the further anode zones of the anode region of the same conductivity type, wherein, the first particular anode zone is configured to serve, during operating mode with ESD loading, as an emitter region of a bipolar transistor formed in parasite fashion in the integrated diode arrangement and wherein the alternately occurring first and second anode zones and said first particular anode zone of the anode region that are directly adjacent to one another are short-circuited;
- wherein the first particular anode zone of the second conductivity type constitutes an outermost or innermost anode zone of the second conductivity type with respect to the arrangement of the second anode zones of the second conductivity type along the lateral extension direction and wherein the first particular anode zone is located at the center or border of the semiconductor diode arrangement.
4 more elements
An integrated semiconductor component comprising:
- an anode region of a first conductivity type;
- a cathode region of a second conductivity type, that is different from the first conductivity type wherein the anode and cathode regions are formed in a semiconductor region and extend in a first direction;
- first anode zones of a first conductivity type in the anode region;
- second anode zones of a second conductivity type in the anode region, wherein the first and second anode zones of the anode region are laterally alternately occurring, directly adjacent to one another, short-circuited, and collectively form an arrangement extending in a second lateral direction;
- means within the arrangement for serving as an emitter region of a bipolar transistor formed in parasitic fashion in the integrated semiconductor component, the means comprising a first particular anode zone that has a comparatively larger lateral extent than the first and second anode zones of the anode region, and that is laterally directly adjacent the first and second anode zones and provided alternately with these anode zones;
- wherein the first particular anode zone of the second conductivity type constitutes an outermost or innermost anode zone of the second conductivity type with respect to the arrangement of the second anode zones of the second conductivity type along the lateral extension direction;
- and
- wherein the first particular anode zone is located at the center or border of the integrated semiconductor component and wherein the first particular and second anode zones are not covered with an isolation layer.
5 more elements
Dependencies are inferred from the claim text.