MOSFET on SOI device
AssigneesSTMicroelectronics (Crolles 2) SAS, Commissariat a l'Energie Atomique
InventorsPhilippe Coronel, Claire Fenouillet-Beranger
Life of this patent
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Abstract
A MOSFET on SOI device includes an upper region having at least one first MOSFET type semi-conductor device formed on a first semi-conductor layer stacked on a first dielectric layer, a first conductive layer and a first portion of a second semi-conductor layer. A lower region includes at least one second MOSFET type semi-conductor device formed on a second portion of the second semi-conductor layer, a gate of the second semi-conductor device being formed by at least one conductive portion. The second semi-conductor layer is arranged on a second dielectric layer stacked on a second conductive layer.
Claims22
An electronic device comprising:
- an upper region comprising
- a first semiconductor layer and at least one first MOSFET device thereon, and
- a first dielectric layer, a first conductive layer, and a first portion of a second semiconductor layer arranged in stack relation and underlying said first semiconductor layer;
- and
- a lower region comprising
- at least one second MOSFET device on a second portion of the second semiconductor layer,
- said at least one second MOSFET device comprising a gate including at least one conductive portion, and
- a second dielectric layer and a second conductive layer arranged in stacked relation and underlying said second semiconductor layer.
An electronic device comprising:
- an upper region comprising
- a first semiconductor layer and at least one first MOSFET device comprising a PMOS transistor thereon, and
- a first dielectric layer, a first conductive layer, and a first portion of a second semiconductor layer arranged in stack relation and underlying said first semiconductor layer, the second semiconductor layer having a different crystalline orientation than the first semiconductor layer;
- and
- a lower region comprising
- at least one second MOSFET device comprising an NMOS transistor on a second portion of the second semiconductor layer,
- said at least one second MOSFET device comprising a gate including at least one conductive portion, and a second dielectric layer and a second conductive layer arranged in stacked relation and underlying said second semiconductor layer.
Dependencies are inferred from the claim text.