Nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsKeiko Ariyoshi, Akira Takashima, Shoko Kikuchi, Koichi Muraoka
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Abstract
A nonvolatile semiconductor memory device according to an example of the present invention includes a semiconductor region, source/drain areas arranged separately in the semiconductor region, a tunnel insulating film arranged on a channel region between the source/drain areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulating film arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulating film. The inter-electrode insulating film includes La, Al and Si.
Claims18
A nonvolatile semiconductor memory device comprising:
- a semiconductor region;
- source/drain areas arranged separately in the semiconductor region;
- a tunnel insulating film arranged on a channel region between the source/drain areas;
- a floating gate electrode arranged on the tunnel insulating film;
- an inter-electrode insulating film including La, Al and Si, which is arranged on the floating gate electrode;
- and
- a control gate electrode arranged on the inter-electrode insulating film,
- wherein composition ratio of the inter-electrode insulating film is within a range of 0.06<Si/(La+Al)<0.60.
A nonvolatile semiconductor memory device comprising:
- a semiconductor region;
- source/drain areas arranged separately in the semiconductor region;
- a tunnel insulating film arranged on a channel region between the source/drain areas;
- a charge storage layer arranged on the tunnel insulating film;
- a block insulating film including La, Al and Si, which is arranged on the charge storage layer;
- and
- a control gate electrode arranged on the block insulating film,
- wherein composition ratio of the block insulating film is within a range of 0.06<Si/(La+Al)<0.60.
Dependencies are inferred from the claim text.