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US 7,804,126 B2Granted
Dense non-volatile memory array and method of fabrication
AssigneeSaifun Semiconductors Ltd.
InventorsBoaz Eitan, Ilan Bloom, Rustom Irani
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Abstract
A non-volatile memory array has word lines spaced a sub-F (sub-minimum feature size F) width apart and bit lines generally perpendicular to the word lines. The present invention also includes a method for word-line patterning of a non-volatile memory array which includes generating sub-F word lines from mask generated elements with widths of at least a minimum feature size F.
Claims6
A non-volatile memory array comprising:
- word lines of a sub-F width (sub-minimum feature size F);
- said word lines spaced a sub-F width apart;
- bit lines generally perpendicular to said word lines;
- and
- wherein said sub-F word line width is at least 0.5 F and said sub-F spacing is less than 0.5 F.
2 more elements
A non-volatile memory array comprising:
- word lines of a sub-F width (sub-minimum feature size F);
- said word lines are spaced a sub-F width apart;
- bit lines generally perpendicular to said word lines;
- and
- wherein said sub-F word line width is at least 0.1 F and said sub-F spacing is at least 0.7 F.
2 more elements
Dependencies are inferred from the claim text.