Flash memory device and programming and erasing methods therewith
AssigneeDongbu HiTek Co., Ltd.
InventorJin Hyo Jung
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Abstract
A flash memory device and programming and erasing methods therewith is disclosed, to secure the programming and erasing characteristics by changing a structure of a floating gate, in which the flash memory device includes a first conductive type semiconductor substrate defined as a field area and an active area; a tunnel oxide layer on the active area of the first conductive type semiconductor substrate; a floating gate on the tunnel oxide layer, having at least first and second floating gates having different levels of energy band gap; a dielectric layer on the floating gate; a control gate on the dielectric layer; and second conductive type source/drain regions in the active area of the first conductive type semiconductor substrate at both sides of the floating gate.
Claims7
A flash memory device comprising:
- a first conductive type semiconductor substrate defined as a field area and an active area;
- a tunnel oxide layer on the active area;
- a first floating gate and a second floating gate formed on the tunnel oxide layer, wherein a lateral sidewall of the second floating gate is in contact with a lateral sidewall of the first floating gate;
- a dielectric layer formed on the first floating gate and the second floating gate;
- a control gate on the dielectric layer;
- and
- second conductive type source/drain regions in the active area of the semiconductor substrate at both sides of the first floating gate/the second floating gate.
Dependencies are inferred from the claim text.