Non-volatile semiconductor memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Jung-Dal Choi, Byoung-Woo Ye
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Abstract
A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.
Claims23
A non-volatile memory device comprising:
- a tunnel layer on an active region, said tunnel layer comprising a silicon oxide layer;
- a charge storage layer on the silicon oxide layer;
- an aluminum oxide layer on the charge storage layer;
- and
- a gate on the aluminum oxide layer,
- wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer during a program operation.
A non-volatile memory device comprising:
- a tunnel layer on an active region, said tunnel layer comprising a silicon oxide layer;
- a charge storage layer on the silicon oxide layer;
- a blocking insulating layer on the charge storage layer, the blocking insulating layer comprising an aluminum oxide layer;
- and
- a gate electrode on the blocking layer,
- wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer during a program operation.
A non-volatile memory device comprising:
- a semiconductor substrate;
- impurity doped regions in the substrate;
- a tunnel layer on the semiconductor substrate, the tunnel layer comprising a silicon oxide layer;
- a charge storage layer on the single silicon oxide layer;
- an aluminum oxide layer on the charge storage layer;
- and
- a gate electrode on the aluminum oxide layer,
- wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer during a program operation.
Dependencies are inferred from the claim text.