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US 7,804,112 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorToshio Nakajima
Life of this patent
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Abstract
The semiconductor device according to the present invention includes an SJMOSFET having a plurality of base regions formed at an interval from each other and an SBD (Schottky Barrier Diode) having a Schottky junction between the plurality of base regions. The SBD is provided in parallel with a parasitic diode of the SJMOSFET.
Claims6
A semiconductor device comprising:
- an SJMOSFET (Super Junction Metal Oxide Semiconductor Field-Effect Transistor) having a plurality of base regions formed at an interval from each other;
- and
- an SBD (Schottky Barrier Diode), having a Schottky junction between the plurality of base regions, provided in parallel with a parasitic diode of the SJMOSFET.
Dependencies are inferred from the claim text.