US 7,804,106 B2 · P-type nitride semiconductor structure and bipolar transistor

Abstract

A nitride semiconductor structure is provided which greatly improves ohmic characteristics by repairing process damage by regrowing an indium-containing p-type nitride semiconductor on a p-type nitride semiconductor having the process damage. In addition, a nitride semiconductor bipolar transistor is provided which can greatly improve its current gain and offset voltage. The structure includes an indium-containing p-type nitride semiconductor layer on a p-type nitride semiconductor processed by etching. The bipolar transistor, which has a base layer composed of a p-type nitride semiconductor, has an indium-containing p-type InGaN base layer regrown on a surface of a p-type InGaN base layer exposed by etching an emitter layer.

Claims15

Dependent claims

A nitride semiconductor structure comprising on a substrate:

an n-type collector layer;
a p-type base layer formed over said n-type collector layer, wherein said p-type base layer is p-type InGaN;
an n-type emitter layer formed directly on a first portion of a top surface of said p-type base layer;
an indium-containing p-type nitride semiconductor layer formed directly on a second portion of said top surface of said p-type base layer, wherein said n-type emitter layer is not formed on the second portion, and said indium-containing p-type nitride semiconductor layer has an indium mole fraction that is higher than an indium mole fraction of said p-type InGaN base layer, and does not contact said n-type emitter layer;
and
a base electrode formed over said indium-containing p-type nitride semiconductor layer.

3 more elements

Dependencies are inferred from the claim text.

P-type nitride semiconductor structure and bipolar transistor

Life of this patent

P-type nitride semiconductor structure and bipolar transistor

Life of this patent

Abstract

Claims15