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US 7,804,088 B2Granted
Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device
AssigneeFUJIFILM Corporation
InventorsAtsushi Tanaka, Ken-ichi Umeda, Kohei Higashi, Maki Nangu
Life of this patent
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Abstract
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
Claims29
A semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
- the channel region comprises an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
A manufacturing method of a semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
- the channel region is formed with an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
Dependencies are inferred from the claim text.