Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

A process for fabricating a thin film semiconductor device, comprising, not necessarily in the following order, the steps of:

• (a) depositing, onto a substrate, a thin film of n-channel organic semiconductor material that comprises a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment;
• with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent, such that the organic semiconductor material exhibits a field effect electron mobility that is greater than 0.01 cm2/Vs;
• (b) forming a spaced apart source electrode and drain electrode,
• wherein the source electrode and the drain electrode are separated by, and electrically connected with, the n-channel semiconductor film;
• and,
• (c) forming a gate electrode spaced apart from the organic semiconductor material.