Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit

A solid electrolyte switching element comprising:

• a first electrode and a second electrode provided separated by prescribed distance;
• a solid electrolyte layer provided in contact with said first electrode and said second electrode;
• a third electrode that is provided in contact with said solid electrolyte layer and that can supply metal ions;
• and
• a metal diffusion prevention film that covers points of a surface of said solid electrolyte layer that do not contact any of said first electrode, said second electrode, and said third electrode, wherein:
• an interconnect construction that includes said first electrode, said second electrode and said third electrode, is provided in an insulating layer;
• and
• said solid electrolyte layer is provided on said interconnect construction.

A solid electrolyte switching element comprising:

• a first electrode and a second electrode provided separated by prescribed distance;
• a solid electrolyte layer provided in contact with said first electrode and said second electrode;
• a third electrode that is provided in contact with said solid electrolyte layer and that can supply metal ions;
• and
• a metal diffusion prevention film that covers points of a surface of said solid electrolyte layer that do not contact any of said first electrode, said second electrode, and said third electrode, wherein:
• said third electrode is provided in a first insulating layer,
• an interconnect construction that includes said first electrode and said second electrode, is provided in a second insulating layer that is on said first insulating layer, and
• said solid electrolyte layer is provided on said interconnect construction.

A solid electrolyte switching element comprising:

• a first electrode and a first aperture provided in an insulating layer having the function of preventing the diffusion of metal;
• a solid electrolyte layer provided on said insulating layer, contacting said first electrode, and covering said first aperture;
• a metal diffusion prevention film covering said solid electrolyte layer and having a second aperture that exposes a portion of said solid electrolyte layer;
• a second electrode that contacts said solid electrolyte layer by way of said second aperture;
• and
• a third electrode contacting said solid electrolyte layer by way of said first aperture provided in said insulating layer and that can supply metal ions.

A solid electrolyte switching element comprising:

• a first electrode and a second electrode provided separated by prescribed distance;
• a solid electrolyte layer provided in contact with said first electrode and said second electrode;
• a third electrode that is provided in contact with said solid electrolyte layer and that can supply metal ions;
• and
• a metal diffusion prevention film that covers points of a surface of said solid electrolyte layer that do not contact any of said first electrode, said second electrode, and said third electrode, wherein
• said third electrode is composed of a metal that contains copper, and
• points of said third electrode that do not contact said solid electrolyte layer are covered by at least one of a barrier metal and a metal diffusion prevention film.

A solid electrolyte switching element comprising:

• a first electrode and a second electrode provided separated by prescribed distance;
• a solid electrolyte layer provided in contact with said first electrode and said second electrode;
• a third electrode that is provided in contact with said solid electrolyte layer and that can supply metal ions;
• and
• a metal diffusion prevention film that covers points of a surface of said solid electrolyte layer that do not contact any of said first electrode, said second electrode, and said third electrode,
• wherein said metal diffusion prevention film is a compound film composed of silicon and any amount of nitrogen, oxygen, and carbon.

A solid electrolyte switching element comprising:

• a first electrode and a second electrode provided separated by prescribed distance;
• a solid electrolyte layer provided in contact with said first electrode and said second electrode;
• a third electrode that is provided in contact with said solid electrolyte layer and that can supply metal ions;
• and
• a metal diffusion prevention film that covers points of a surface of said solid electrolyte layer that do not contact any of said first electrode, said second electrode, and said third electrode,
• wherein at least one of said solid electrolyte and said third electrode are embedded in a multilayer insulating film in which a plurality of insulating films are stacked.

An integrated circuit comprising:

• a solid electrolyte switching element comprising a first electrode and a second electrode provided separated by prescribed distance, a solid electrolyte layer provided in contact with said first electrode and said second electrode, a third electrode that is provided in contact with said solid electrolyte layer and that can supply metal ions, and a metal diffusion prevention film that covers points of a surface of said solid electrolyte layer that do not contact any of said first electrode, said second electrode, and said third electrode;
• and
• a multilayer interconnect that includes an interconnect and a viaplug;
• wherein:
• said third electrode is provided on the same layer as said interconnects;
• and
• said solid electrolyte layer is provided on the same layer as said viaplug.

A fabrication method of a solid electrolyte switching element that includes a first electrode, a second electrode, and a third electrode, said fabrication method comprising the steps of:

• forming a first aperture in a first insulating layer;
• embedding an interconnect material that can supply metal ions in said first aperture to form said third electrode;
• forming a second insulating layer on said first insulating layer;
• forming a second aperture that exposes a portion of said third electrode in said second insulating layer;
• forming a metal diffusion prevention film on the side walls of said second aperture;
• embedding a solid electrolyte layer in said second aperture;
• forming a third insulating layer on said second insulating layer;
• forming a resist having a third aperture pattern and a fourth aperture pattern separated by a prescribed distance on said third insulating layer;
• enlarging the area of apertures of said third aperture pattern and said fourth aperture pattern by a first etching;
• carrying out a second etching on said third insulating layer with said resist as a mask to form a third aperture and a fourth aperture that expose a portion of said solid electrolyte layer respectively in said third insulating layer;
• and
• after removing said resist, embedding an interconnect material in said third aperture and said fourth aperture to form said first electrode and second electrode.

A fabrication method of a solid electrolyte switching element that includes a first electrode, a second electrode, and a third electrode, said fabrication method comprising the steps of:

• forming a first aperture in a first insulating layer;
• embedding an interconnect material that can supply metal ions in said first aperture to form said third electrode;
• forming a second insulating layer on said first insulating layer;
• forming a second aperture that exposes a portion of said third electrode in said second insulating layer;
• forming a metal diffusion prevention film on the side walls of said second aperture;
• embedding a solid electrolyte layer in said second aperture;
• forming a third insulating layer on said second insulating layer;
• forming a resist having a third aperture pattern and a fourth aperture pattern separated by a prescribed distance on said third insulating layer;
• carrying out a first etching on said third insulating layer with said resist as a mask to form a third aperture and a fourth aperture that expose a portion of said solid electrolyte layer respectively in said third insulating layer;
• carrying out a second etching on said third insulating layer to enlarge the area of apertures of said third aperture and said fourth aperture;
• and
• after removing said resist, embedding an interconnect material in said third aperture and said fourth aperture to form said first electrode and second electrode.